Defects and diffusion in semiconductors : an annual retrospective XIV /
A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized in...
Other Authors: | |
---|---|
Format: | Book |
Language: | English |
Published: |
Durnten-Zurich :
TTP,
[2012]
|
Series: | Diffusion and defect data Defect and diffusion forum ;
v. 332. |
Subjects: |
Internet
This item is not available through BorrowDirect. Please contact your institution’s interlibrary loan office for further assistance.Stanford University
Call Number: |
ISIL:US-CST |
---|