Ion implantation technology 2010 : 18th International Conference on Ion Implantation Technology, IIT 2010, Kyoto, Japan, 6-11 June 2010 /

Ion implantation technology 2010 : 18th International Conference on Ion Implantation Technology, IIT 2010, Kyoto, Japan, 6-11 June 2010 /

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Bibliographic Details
Corporate Author: International Conference on Ion Implantation Technology Kyoto, Japan
Other Authors: Matsuo, Jiro
Format: Conference Proceeding Book
Language:English
Published: Melville, N.Y. : American Institute of Physics, c2010
Series:AIP conference proceedings ; no. 1321
Subjects:
Ion implantation > Congresses
Ion implantation
Conference papers and proceedings
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111 2 |a International Conference on Ion Implantation Technology  |n (18th :  |d 2010 :  |c Kyoto, Japan) 
245 1 0 |a Ion implantation technology 2010 :  |b 18th International Conference on Ion Implantation Technology, IIT 2010, Kyoto, Japan, 6-11 June 2010 /  |c editors, Jiro Matsuo ... [et al.] 
246 3 |a Eighteenth International Conference on Ion Implantation Technology 
246 3 0 |a 18th International Conference on Ion Implantation Technology 
246 3 0 |a IIT 2010 
260 |a Melville, N.Y. :  |b American Institute of Physics,  |c c2010 
300 |a xiv, 518 p. :  |b ill. ;  |c 28 cm 
336 |a text  |b txt  |2 rdacontent 
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338 |a volume  |b nc  |2 rdacarrier 
490 1 |a AIP conference proceedings,  |x 0094-243X ;  |v 1321 
504 |a Includes bibliographical references and author index 
505 0 |a Plenary: Innovations in ion implantation -- Doping technology -- Advanced ion implantation system and equipments 
505 0 0 |a Contents note continued:  |t Nissin Ion Doping System---H2+ Implantation for Silicon Layer Exfoliation /  |r M. Naito --  |t Contamination Control in Ion Implantation /  |r W. Wriggins --  |t Characterization of Boron Contamination in Fluorine Implantation Using Boron Trifluoride as a Source Material /  |r S. Kondratenko --  |t Improving Sustainability of Ion Implant Modules /  |r J. Mayer --  |t Properties of Diboron Tetrafluoride (B2F4), a New Gas for Boron Ion Implantation /  |r R. Kaim --  |t Investigation into Methods to Improve Ion Source Life for Germanium Implantation /  |r S. Bishop --  |t Use of Xenon Difluoride to Clean Hazardous By-products in Ion Implanter Source Housings, Turbo Pumps, and Fore-Lines /  |r S. Yedave --  |t Improving Ion Implanter Productivity with In-Situ Cleaning /  |r A. Perry --  |t Extending Ion Source Life on High Current Ion Implant Tools with In-Situ Chemical Cleaning /  |r A. Botet --  |t Transfer from Rs-based to PMOR-based Ion Implantation Process Monitoring /  |r D. Shaughnessy --  |t Accurate Dose Distribution Control under Pressure Variation Caused by Photoresist Outgassing for Low Temperature Polycrystalline-silicon TFT /  |r M. Naito --  |t Implant Monitoring Measurements on Ultra Shallow Implants before and after Anneal Using Photomodulated Reflection and Junction Photovoltage Measurement Techniques /  |r T. Pavelka --  |t Monitoring Ion Implantation Energy Using Non-contact Characterization Methods /  |r T. Pavelka --  |t Leakage Current Measurements by Junction Photovoltage Technique /  |r T. Pavelka --  |t Development of a Compact Ion Source with a Hot Hollow Cathode /  |r M. Wada --  |t N- and P-Type Cluster Source /  |r G. P. Sacco, Jr. --  |t Fabrication of Impregnated-Electrode-Type Polyatomic Ion Source with Ionic Liquid /  |r G. H. Takaoka --  |t Optimization of Compact Microwave Ion Source for Generation of High Current and Low Energy Ion Beam /  |r J. Ishikawa --  |t Multi-frequency Microwaves Plasma Production for Active Profile Control of Ion Beams on a Large Bore ECR Ion Source with Permanent Magnets /  |r T. Iida --  |t Plasma Sputter-type Ion Source with Wire Electrodes for Low-energy Gallium Ion Extraction /  |r M. Wada --  |t Ion Source of Pure Single Charged Boron Based on Planar Magnetron Discharge in Self-sputtering Mode /  |r G. Yu. Yushkov --  |t Molecular Ion Beam Transportation for Low Energy Ion Implantation /  |r H. J. Poole --  |t Synthesis of Endohedral Fullerene Using ECR Ion Source /  |r Y. Yoshida --  |t Ion Beam Sweeping Using High Temperature Super Conducting Magnet /  |r S. Gibson --  |t Collimator Magnet with Functionally Defined Profile for Ion Implantation /  |r J. Ishikawa --  |t Ion Beam Neutralization Using FEAs and Mirror Magnetic Fields /  |r J. Ishikawa --  |t Suppression of Divergence of Low Energy Ion Beams by Space Charge Neutralization with Low Energy Electrons Emitted from Field Emitter Arrays /  |r S. Sakai --  |t Mass Filtering Function of Magnetic Boundaries in Multi-Cusp Ion Source /  |r M. Naito 
505 0 0 |r Zinenko --  |t ADVANCED ION IMPLANTATION SYSTEM AND EQUIPMENTS --  |t PULSION® HP: Tunable, High Productivity Plasma Doping /  |r D. Turnbaugh --  |t Ribbon and Spot Beam Process Performance of the Dual Mode iPulsar High Current Ion Implanter /  |r E. Collart --  |t Productivity Improvement for the SHX---SEN's Single-wafer High-current Ion Implanter /  |r K. Ueno --  |t CLARIS G2: Development of Carbon Cluster Implantation /  |r K. Sekar --  |t Demonstration of Cost-effective, Highly Productive Ultra-shallow Junctions Using Molecular Carbon and Boron as an Alternative to Ge/C/B Implantation /  |r W. Krull --  |t Development of High Productivity Medium Current Ion Implanter "EXCEED 3000AH Evo2" /  |r T. Yamashita --  |t True Zero Degree Incident Implants on VIISta3000 /  |r F. Sinclair --  |t Next Generation Medium Current Product: VIISta 900XPT /  |r J. Olson --  |t Manufacturing Application of SEN's MIND System /  |r M. Sugitani --  |t SEN Ultra-high Energy Implanter (UHE) Developed for Next Generation Image Sensors /  |r M. Sugitani --  |t Angle Performance on Optima XE /  |r S. Satoh --  |t Process Performance of Optima XEx Single Wafer High Energy Implanter /  |r S. W. Jin --  |t Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter /  |r J. David --  |t Aluminum Ion Beam Production for Medium Current Implanter /  |r T. Yamashita --  |t Development of Medium Current Ion Implanter "IMPHEAT" for SiC /  |r T. Yamashita -- 
505 0 0 |t PLENARY---INNOVATIONS IN ION IMPLANTATION --  |t Japan's Contributions to Ion Beam Technologies /  |r I. Yamada --  |t Evolution of Ion Implantation Technology and Its Contribution to Semiconductor Industry /  |r Y. Kawasaki --  |t DOPING TECHNOLOGY --  |t FinFET Doping; Material Science, Metrology, and Process Modeling Studies, for Optimized Device Performance /  |r M. Shayesteh --  |t Novel Approach to Conformal FINFET Extension Doping /  |r W. Vandervorst --  |t Plasma Implantation Technology for Upcoming Ultra Shallow and Highly Doped Fully Depleted Silicon on Insulator Transistors /  |r K. Yckache --  |t Advancement of CMOS Doping Technology in an External Development Framework /  |r J. B. Shaw --  |t How Can We Improve Sub 40nm Transistor Properties by Using Ion Implantation /  |r S. Hwang --  |t Improvement of Poly Profile in Sub 30nm Device by Damage Engineering and Tilted Implantation Method /  |r B. Colombeau --  |t Enabling Solutions for 28nm CMOS Advanced Junction Formation /  |r J. Y. Wu --  |t Process Characterization of Low Temperature Ion Implantation Using Ribbon Beam and Spot Beam in the AIBT iPulsar High Current /  |r T. Karpowicz --  |t Implant Damage Studies with Different Implant Temperature by Spot and Ribbon Beam /  |r Y. Matsunaga --  |t Defectivity Study of PMOS S/D Implants on a Spot Beam High Current Implanter /  |r S.-W. Jin --  |t Integration of High Dose Boron Implants---Modification of Device Parametrics through Implant Temperature Control /  |r R. N. Reece --  |t Benefits of Damage Engineering for PMOS Junction Stability /  |r T. Henry --  |t Doping Technology for the Improvement of Next Generation Device Performance /  |r K. Suguro --  |t Study of Flash Anneal in Combination with the Conventional RTA for DRAM Application /  |r K. Yokouchi --  |t Direct Energy Transferred Rapid Thermal Process (RTP) Method and System for Semiconductor Fabrication /  |r S. Qin --  |t Application of Cluster Boron Implantation to pMOSFETs /  |r T. Kuroi --  |t USJ with ClusterBoron and ClusterCarbon Co-implants /  |r W. Krull --  |t Optimization of Si: C Stress Retention and Junction Quality with ClusterCarbon Implantation /  |r S. McCoy --  |t Extension of the Si: C Stressor Thickness by Using Multiple ClusterCarbon[™] Species /  |r W. Krull --  |t Larger ClusterBoron® (B36Hx) Implant for USJ Applications /  |r J. Venturini --  |t Cluster Ion Implantation for Process Application---Carbon Cluster Co-implantation /  |r W. Krull --  |t Formation of Shallow PN Junction by Cluster Boron Implantation and Rapid Annealing Using Infrared Semiconductor Laser /  |r N. Hamamoto --  |t Advances in the Image Sensor: The Critical Element in the Performance of Cameras /  |r T. Narabu --  |t 22nm Node p+ USJ Formation Using PAI & HALO Implantation with Laser Annealing /  |r B. Darby --  |t Achieving Uniform Device Performance by Using Advanced Process Control and SuperScan[™] /  |r Y. Kim --  |t Surface Oxidation Effects during Low Energy BF2+ Ion Implantation /  |r H. Zhao --  |t Novel Pre-silicide Ion-implanted Impurity for N-Type Si Contacts /  |r R. Jammy --  |t n-LDD Ultra-shallow Extension Formation Using Cold and Carbon Ion Implantation /  |r B. Chang --  |t Improvement of Vertical Diode Properties by N-type Plasma Doping for Low-power Phase Change Nonvolatile Memory (NVM) /  |r S. H. Jo --  |t Optimization and Control of Plasma Doping Processes /  |r G. D. Papasouliotis --  |t Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques /  |r H. Ito --  |t Physical and Electrical Characterization of 120 nm Technology Node Devices Using PULSION® Plasma Doping /  |r O. Pizzuto --  |t Optimization of Etching/Deposition Phenomena for BF3 and B2H6 Plasma Doping Using PULSION® /  |r S. Mehta --  |t Different Profile Responses to Dose Variation for B2H6 and BF3 Plasma Doping Using PULSION® /  |r D. Turnbaugh --  |t Comparison of Different Characterization Techniques for Plasma Implanted Samples Having Highly Doped and Shallow Implanted Layers: Dose Measurement, Profile, Etching or Deposition Characterizations /  |r R. Daineche --  |t Improvements in B+ and BF2+ Beam Currents through the Use of Diboron Tetrafluoride (B2F4) Gas /  |r J. McManus --  |t Ion Implant Enabled 2x Lithography /  |r C. Hatem --  |t MATERIAL SCIENCE IN ION IMPLANTATION TECHNOLOGY --  |t Modeling of Defect Generation and Dissolution in Ion Implanted Semiconductors /  |r M. Aboy --  |t Scatter Defects and Hall Scattering Factor for the Mobility of Boron in Silicon /  |r M. Tanjyo --  |t Comparative Study of Dopant Activation and Deactivation in Boron Implanted Silicon /  |r J. Reyes --  |t Comparative Study of Dopant Activation and Deactivation in Arsenic and Phosphorus Implanted Silicon /  |r J. Reyes --  |t Two-Dimensional Cross-Sectional Doping Profile Study of Low Energy High Dose Ion Implantations Using High Vacuum Scanning Spreading Resistance Microscopy (HV-SSRM) and Electron Holography /  |r W. Vandervorst --  |t High Temperature Ion Implantation Evaluation in Silicon and Germanium /  |r K. Yckache --  |t Deep Level Transient Spectroscopy Study on Recrystallization of Ultra-Shallow Implanted Silicon /  |r W. S. Yoo --  |t Multi-wavelength Raman and Photoluminescence Characterization of Implanted Silicon before and after Rapid Thermal Annealing /  |r K. Kang --  |t Non-contact and Non-destructive Characterization of Shallow Implanted Silicon PN Junctions Using Ultraviolet Raman Spectroscopy /  |r W. S. Yoo --  |t Photo-Induced Carrier Recombination Properties of Silicon Caused by H+ Implantation /  |r T. Sameshima --  |t SWOP---Charge Carrier Depth Profiling of Boron Doped Single Crystalline Silicon /  |r M. Ogiewa --  |t Non-destructive Characterization of Activated Ion-implanted Doping Profiles Based on Photomodulated Optical Reflectance /  |r E. Rosseel --  |t Luminescence Studies of Residual Damage in Low-Dose Arsenic Implanted Silicon after High-temperature Annealing /  |r K. Yamada --  |t Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes Using Scanning Spreading Resistance Microscope /  |r M. Takai --  |t Biomolecular Emission by Swift Heavy Ion Bombardment /  |r J. Matsuo --  |t Lanthanoid Implantation for Effective Work Function Control in NMOS High-κ/Metal Gate Stacks /  |r L. Frey --  |t Microwave Annealing of Ion Implanted 4H-SiC /  |r R. Nipoti --  |t Plasma Immersion Ion Implantation Applied to N+P Junction Realization in 4H-SiC /  |r F. Torregrosa --  |t Effect of Helium Implantation on Gettering and Electrical Properties of 4H-SiC Epilayers /  |r O. Palais --  |t Hydrogen Implants for Layer Exfoliation /  |r C. Wilcox --  |t Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters /  |r L. Frey --  |t Surface Modification Using Highly Charged Ions /  |r T. Terui --  |t Simultaneous Sterilization with Surface Modification of Plastic Bottle by Plasma-based Ion Implantation /  |r Z. Yajima --  |t Characteristics of ZnO Wafers Implanted with 60 keV Sn+ Ions at Room Temperature and at 110 K /  |r M. Taniwaki --  |t Deuterium Uptake in Iron Oxide (Fe2O3) under D2+-Plasma Exposure /  |r S. Masuzaki --  |t Optimization and Characterization of Amorphous Iron Disilicide Formed by Ion Beam Mixing of Fe/Si Multilayer Structures for Photovoltaic Applications /  |r R. Gwilliam --  |t Fabrication of Tetragonal and Close-Packed Nano-Cell Two-Dimensional Lattices by Ga+ Beam on InSb Surface /  |r N. Nitta --  |t Ultra-thin Surface Modification with Nitrogen Gas Cluster Ion Beams /  |r I. Yamada --  |t Vacuum Pressure Dependence on Surface Reaction Induced by Gas Cluster Ions Studied with In-Situ XPS /  |r I. Yamada --  |t Energy Effects on the Sputtering Yield of Si Bombarded with Gas Cluster Ion Beams /  |r J. Matsuo --  |t Evaluation of Surface Damage on Organic Materials Irradiated with Ar Cluster Ion Beam /  |r J. Matsuo --  |t Surface Modification of Silicone Rubber for Adhesion Patterning of Mesenchymal Stem Cells by Water Cluster Ion Beam /  |r G. H. Takaoka --  |t Preferential Refilling and Planarization of Grooves with Amorphous Carbon by Using Gas Cluster Ion Beam Irradiations /  |r I. Yamada --  |t Surface Processing and Modification of Polymers by Water Cluster Ion Beam /  |r G. H. Takaoka --  |t Evaluation of Surface Damage of Organic Films due to Irradiation with Energetic Ion Beams /  |r J. Matsuo --  |t High Speed Si Etching with CIF3 Cluster Injection /  |r J. Matsuo --  |t X-ray Photoelectron Spectroscopy Analysis of Organic Materials Irradiated with Gas Cluster Ion Beam /  |r I. Yamada --  |t Erosion of Extraction Electrodes of Ion Sources due to Sputtering /  |r M. Wada --  |t Physical Ion Sputtering at Glancing Angles as a Novel IC De-processing Technique /  |r V. I.  
650 0 |a Ion implantation  |v Congresses 
650 7 |a Ion implantation  |2 fast 
655 7 |a Conference papers and proceedings  |2 fast 
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700 1 |a Matsuo, Jiro 
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